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Nexperia offers a broad portfolio of low- / middle-voltage (12-200 V) P- and N-channel silicon MOSFETs in a wide range of space-saving and efficient package options.

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For a variety of high-voltage (650 V) and low-voltage (40-150 V) applications Nexperia GaN FETs deliver the fastest transition / switching capability , best power efficiency and enhanced power density through reduced conduction and switching losses.

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